S8050 Transistor — Specifications & Equivalents
S8050 Transistor Datasheet pdf, S8050 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.3 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 150 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 120 |
| Noise Figure, dB | - |
| Package | SOT23 |
| S8050NPN SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxCollector3A 2.800 3.040Complimentary to S8550B 1.200 1.4001Base C 0.890 1.1102Collector Current | IC=0.5AEmitter D 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.600 |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8050 TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to S8550 Collector current | IC=0.5A 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.COLLECTOR Symbol ParameterValue UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emit |
| S8 050TRANSISTOR(NPN)SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current | IC=0.8A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A PC Collector |