PXT8050 Transistor — Specifications & Equivalents
PXT8050 Transistor Datasheet pdf, PXT8050 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 1.5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 100 MHz |
| Collector Capacitance (Cc) | 15 pF |
| Forward Current Transfer Ratio (hFE), MIN | 85 |
| Noise Figure, dB | - |
| Package | SOT89 |
| Product specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN) FEATURES Commplimentray to PXT8550 Pb Lead-free APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8050 8050 SOT-89 | none is for Lead Free package; G is for Halogen Free package. MAX |