S9013 bipolar transistor — Specifications & Equivalents

About the S9013

The S9013 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 25 V, a continuous collector current (IC) of 0.5 A and a DC current gain (hFE) of minimum 120. It can dissipate up to 0.3 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 25 V
  • Max collector current (IC): 0.5 A
  • DC current gain (hFE): minimum 120
  • Transition frequency (fT): 150 MHz
  • Power dissipation (PD): 0.3 W
  • Max junction temperature (TJ): 150 °C
  • Package: SOT23

Typical applications

Judging from its ratings the S9013 is generally applied in RF and high-speed switching stages and small-signal amplification and general-purpose switching.

A transition frequency (fT) of 150 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 120 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 25 V, VCBO 40 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 0.3 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the S9013

A drop-in substitute for the S9013 must be the same NPN type and offer a collector–emitter rating of at least 25 V, a collector current rating of at least 0.5 A, current gain in the same ballpark as minimum 120 and a transition frequency of at least 150 MHz for the same bandwidth.

Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the S9013?

The S9013 is an NPN bipolar junction transistor (BJT). It is rated for 25 V collector-emitter and 0.5 A continuous collector current.

What is the maximum voltage of the S9013?

Maximum collector-emitter voltage (Vceo) is 25 V, and collector-base (Vcbo) is 40 V.

How much current can the S9013 handle?

Continuous collector current is rated at 0.5 A, with dissipation limited to 0.3 W.

What is the hFE of the S9013?

DC current gain (hFE) is quoted as minimum 120. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the S9013 come in?

It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the S9013?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.3 W
Maximum Collector-Base Voltage |Vcb|40 V
Maximum Collector-Emitter Voltage |Vce|25 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.5 A
Max. Operating Junction Temperature (Tj)150 °C
Transition Frequency (ft)150 MHz
Forward Current Transfer Ratio (hFE), MIN120
Noise Figure, dB-
PackageSOT23
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKINGJ3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

Equivalent & Replacement Parts

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