A1015 bipolar transistor — Specifications & Equivalents

About the A1015

The A1015 is a PNP bipolar transistor with a collector–emitter voltage (V_CEO) rating of 50 V, a continuous collector current (I_C) of 0.15 A and a DC current gain (h_FE) of minimum 130. It can dissipate up to 0.2 W and is rated to a junction temperature of 125 °C. It is supplied in the SOT23 package.

At a glance

• Type: PNP bipolar transistor
• Max collector–emitter voltage (V_CEO): 50 V
• Max collector current (I_C): 0.15 A
• DC current gain (h_FE): minimum 130
• Transition frequency (f_T): 80 MHz
• Power dissipation (P_D): 0.2 W
• Max junction temperature (T_J): 125 °C
• Package: SOT23

Typical applications

Judging from its ratings the A1015 is generally applied in small-signal amplification and general-purpose switching.

A transition frequency (f_T) of 80 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 130 determines the base drive needed: divide your target collector current by the minimum h_FE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are V_CEO 50 V, V_CBO 50 V and V_EBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 0.2 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the A1015

A drop-in substitute for the A1015 must be the same PNP type and offer a collector–emitter rating of at least 50 V, a collector current rating of at least 0.15 A, current gain in the same ballpark as minimum 130 and a transition frequency of at least 80 MHz for the same bandwidth.

Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the A1015?

The A1015 is a PNP bipolar junction transistor (BJT). It is rated for 50 V collector-emitter and 0.15 A continuous collector current.

What is the maximum voltage of the A1015?

Maximum collector-emitter voltage (Vceo) is 50 V, and collector-base (Vcbo) is 50 V.

How much current can the A1015 handle?

Continuous collector current is rated at 0.15 A, with dissipation limited to 0.2 W.

What is the hFE of the A1015?

DC current gain (hFE) is quoted as minimum 130. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the A1015 come in?

It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the A1015?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.