A1015 Transistor — Specifications & Equivalents
A1015 Transistor Datasheet pdf, A1015 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.15 A |
| Max. Operating Junction Temperature (Tj) | 125 °C |
| Transition Frequency (ft) | 80 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 130 |
| Noise Figure, dB | - |
| Package | SOT23 |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING | BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Ba |
| A1015TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING | BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Co |