M8550 Transistor — Specifications & Equivalents
M8550 Transistor Datasheet pdf, M8550 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 0.8 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 150 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 85 |
| Noise Figure, dB | - |
| Package | SOT23 |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8550 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING | Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage |
| M8 550TRANSISTOR(PNP)SOT-23 FEATURES Power dissipation MARKING | Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju |