MMBTA44 Transistor — Specifications & Equivalents
MMBTA44 Transistor Datasheet pdf, MMBTA44 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.35 W |
| Maximum Collector-Base Voltage |Vcb| | 500 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Collector Capacitance (Cc) | 7 pF |
| Forward Current Transfer Ratio (hFE), MIN | 50 |
| Noise Figure, dB | - |
| Package | SOT23 |
| MMBTA44Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range | -55 to +1 |
| UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3*Collector-Emitter voltage | V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO*Collector current up to 300mA 1*Complement to UTC MMBTA94/93 2*Power Dissipation: P (max)=350mW DSOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING | 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt |