S9012 Transistor — Specifications & Equivalents
S9012 Transistor Datasheet pdf, S9012 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.3 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 150 MHz |
| Collector Capacitance (Cc) | 5 pF |
| Forward Current Transfer Ratio (hFE), MIN | 120 |
| Noise Figure, dB | - |
| Package | SOT23 |
| S9012PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation 11C 0.890 1.1102BasePCM | 0.3 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : - 0.5 A AEmitterH 0.013 0.100LCollector-base v |