PXT3906 Transistor — Specifications & Equivalents

PXT3906 Transistor Datasheet pdf, PXT3906 Equivalent. Parameters and Characteristics

Key Specifications

Material of TransistorSi
PolarityPNP
Maximum Collector Power Dissipation (Pc)0.5 W
Maximum Collector-Base Voltage |Vcb|40 V
Maximum Collector-Emitter Voltage |Vce|40 V
Maximum Emitter-Base Voltage |Veb|6 V
Maximum Collector Current |Ic max|0.2 A
Max. Operating Junction Temperature (Tj)150 °C
Transition Frequency (ft)250 MHz
Collector Capacitance (Cc)4.5 pF
Forward Current Transfer Ratio (hFE), MIN100
Noise Figure, dB-
PackageSOT89
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT3904 2. COLLECTOR 1 2 Low current 3 3. EMITTER Low voltage MARKING2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Col
PXT3906TRANSISTOR(PNP) SOT-89 FEATURES Compliment to PXT3904 1. BASE Low current 1 2. COLLECTOR Low voltage 2 MARKING2A 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2
PXT3906 SOT-89 Transistor(NPN)1. BASE 1 2. COLLECTOR SOT-893. EMITTER 2 4.6B4.41.61.83 1.41.4Features2.6 Compliment to PXT3904 4.252.43.75 Low current 0.8MIN0.53 Low voltage 0.400.480.442x)0.13 B0.35 0.37MARKING2A 1.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Pa

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