S8550 Transistor — Specifications & Equivalents
S8550 Transistor Datasheet pdf, S8550 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.3 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 150 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 120 |
| Noise Figure, dB | - |
| Package | SOT23 |
| S8550PNP SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES SOT-23Dim Min MaxCollector3A 2.800 3.040Complimentary to S8050B 1.200 1.4001BaseC 0.890 1.1102EmitterCollector Current | IC=0.5AD 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.60 |
| S8 550S901 2SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current | IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A |