MMBTA94 Transistor — Specifications & Equivalents
MMBTA94 Transistor Datasheet pdf, MMBTA94 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.35 W |
| Maximum Collector-Base Voltage |Vcb| | 400 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 50 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 80 |
| Noise Figure, dB | - |
| Package | SOT23 |
| UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter Voltage | V = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING | 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte |
| MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING | 4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C |