MMBTA94 bipolar transistor — Specifications & Equivalents

About the MMBTA94

The MMBTA94 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 400 V, a continuous collector current (IC) of 0.1 A and a DC current gain (hFE) of minimum 80. It can dissipate up to 0.35 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23 package.

At a glance

  • Type: PNP bipolar transistor
  • Max collector–emitter voltage (VCEO): 400 V
  • Max collector current (IC): 0.1 A
  • DC current gain (hFE): minimum 80
  • Transition frequency (fT): 50 MHz
  • Power dissipation (PD): 0.35 W
  • Max junction temperature (TJ): 150 °C
  • Package: SOT23

Typical applications

Judging from its ratings the MMBTA94 is generally applied in small-signal amplification and general-purpose switching and high-voltage switching such as offline converters and lamp drivers.

A transition frequency (fT) of 50 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 80 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 400 V, VCBO 400 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 0.35 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the MMBTA94

A drop-in substitute for the MMBTA94 must be the same PNP type and offer a collector–emitter rating of at least 400 V, a collector current rating of at least 0.1 A, current gain in the same ballpark as minimum 80 and a transition frequency of at least 50 MHz for the same bandwidth.

Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the MMBTA94?

The MMBTA94 is a PNP bipolar junction transistor (BJT). It is rated for 400 V collector-emitter and 0.1 A continuous collector current.

What is the maximum voltage of the MMBTA94?

Maximum collector-emitter voltage (Vceo) is 400 V, and collector-base (Vcbo) is 400 V.

How much current can the MMBTA94 handle?

Continuous collector current is rated at 0.1 A, with dissipation limited to 0.35 W.

What is the hFE of the MMBTA94?

DC current gain (hFE) is quoted as minimum 80. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the MMBTA94 come in?

It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the MMBTA94?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityPNP
Maximum Collector Power Dissipation (Pc)0.35 W
Maximum Collector-Base Voltage |Vcb|400 V
Maximum Collector-Emitter Voltage |Vce|400 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.1 A
Max. Operating Junction Temperature (Tj)150 °C
Transition Frequency (ft)50 MHz
Forward Current Transfer Ratio (hFE), MIN80
Noise Figure, dB-
PackageSOT23
UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter VoltageV = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte
MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C

Equivalent & Replacement Parts

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