Question 1

What is 13007?

Accepted Answer

13007 Transistor Datasheet pdf, 13007 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 13007?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 85 W, Maximum Collector-Base Voltage |Vcb|: 700 V, Maximum Collector-Emitter Voltage |Vce|: 400 V, Maximum Emitter-Base Voltage |Veb|: 9 V, Maximum Collector Current |Ic max|: 9 A, Max. Operating Junction Temperature (Tj): 150 °C, Transition Frequency (ft): 5 MHz, Forward Current Transfer Ratio (hFE), MIN: 20, Noise Figure, dB: -, Package: TO220

Question 3

What are equivalent components to 13007?

Accepted Answer

Common equivalents include: 2SB858B, 2SB858C, 2SB858D, 2SB859, 2SB859B, 2SB859C, 2SB86, 2SB860

13007 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	700 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	9 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft)	5 MHz
Forward Current Transfer Ratio (hFE), MIN	20
Noise Figure, dB	-
Package	TO220