2SC4796 bipolar transistor — Specifications & Equivalents
Manufacturer: Multi-source (JIS registered part number)
About the 2SC4796
The 2SC4796 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 900 V, a continuous collector current (IC) of 6 A and a DC current gain (hFE) of minimum 35. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3PFM package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 900 V
- Max collector current (IC): 6 A
- DC current gain (hFE): minimum 35
- Power dissipation (PD): 50 W
- Max junction temperature (TJ): 150 °C
- Package: TO3PFM
- Manufacturer: Multi-source (JIS registered part number)
Typical applications
Judging from its ratings the 2SC4796 is generally applied in power output and driver stages and high-voltage switching such as offline converters and lamp drivers.
The quoted current gain of minimum 35 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 900 V, VCBO 1700 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 50 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the 2SC4796
A drop-in substitute for the 2SC4796 must be the same NPN type and offer a collector–emitter rating of at least 900 V, a collector current rating of at least 6 A and current gain in the same ballpark as minimum 35.
Mechanically, check the replacement against the TO3PFM footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2SC4796 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2SC4796?
The 2SC4796 is an NPN bipolar junction transistor (BJT). It is rated for 900 V collector-emitter and 6 A continuous collector current.
What is the maximum voltage of the 2SC4796?
Maximum collector-emitter voltage (Vceo) is 900 V, and collector-base (Vcbo) is 1700 V.
How much current can the 2SC4796 handle?
Continuous collector current is rated at 6 A, with dissipation limited to 50 W.
What is the hFE of the 2SC4796?
DC current gain (hFE) is quoted as minimum 35. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the 2SC4796 come in?
It is listed in TO3PFM. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2SC4796?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1700 V |
| Maximum Collector-Emitter Voltage |Vce| | 900 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 35 |
| Noise Figure, dB | - |
| Package | TO3PFM |
| INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4796DESCRIPTIONHigh Breakdown Voltage- | V = 1700V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI |
| 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit | mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO |
| UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number | 2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T |