2SC4793 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JIS registered part number)

About the 2SC4793

The 2SC4793 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 230 V, a continuous collector current (IC) of 1 A and a DC current gain (hFE) of minimum 100. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220F package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 230 V
  • Max collector current (IC): 1 A
  • DC current gain (hFE): minimum 100
  • Transition frequency (fT): 100 MHz
  • Power dissipation (PD): 50 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220F
  • Manufacturer: Multi-source (JIS registered part number)

Typical applications

Judging from its ratings the 2SC4793 is generally applied in RF and high-speed switching stages and power output and driver stages.

A transition frequency (fT) of 100 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 100 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 230 V, VCBO 230 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 50 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2SC4793

A drop-in substitute for the 2SC4793 must be the same NPN type and offer a collector–emitter rating of at least 230 V, a collector current rating of at least 1 A, current gain in the same ballpark as minimum 100 and a transition frequency of at least 100 MHz for the same bandwidth.

Mechanically, check the replacement against the TO220F footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SC4793 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SC4793?

The 2SC4793 is an NPN bipolar junction transistor (BJT). It is rated for 230 V collector-emitter and 1 A continuous collector current.

What is the maximum voltage of the 2SC4793?

Maximum collector-emitter voltage (Vceo) is 230 V, and collector-base (Vcbo) is 230 V.

How much current can the 2SC4793 handle?

Continuous collector current is rated at 1 A, with dissipation limited to 50 W.

What is the hFE of the 2SC4793?

DC current gain (hFE) is quoted as minimum 100. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2SC4793 come in?

It is listed in TO220F. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SC4793?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)50 W
Maximum Collector-Base Voltage |Vcb|230 V
Maximum Collector-Emitter Voltage |Vce|230 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|1 A
Max. Operating Junction Temperature (Tj)150 °C
Transition Frequency (ft)100 MHz
Collector Capacitance (Cc)20 pF
Forward Current Transfer Ratio (hFE), MIN100
Noise Figure, dB-
PackageTO220F
2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications UnitmmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO
UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T
NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEOCEO 2SA1837 Complementary to 2SA1937 High transition frequencyfT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

Equivalent & Replacement Parts

Browse all electronic components