Question 1

What is 2SC4806?

Accepted Answer

2SC4806 Transistor Datasheet pdf, 2SC4806 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SC4806?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 50 W, Maximum Collector-Base Voltage |Vcb|: 1700 V, Maximum Collector-Emitter Voltage |Vce|: 600 V, Maximum Emitter-Base Voltage |Veb|: 5 V, Maximum Collector Current |Ic max|: 5 A, Max. Operating Junction Temperature (Tj): 150 °C, Transition Frequency (ft): 1 MHz, Collector Capacitance (Cc): 240 pF, Forward Current Transfer Ratio (hFE), MIN: 8, Noise Figure, dB: -, Package: ISOWATT218, INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su, Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi, Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.

Question 3

What are equivalent components to 2SC4806?

Accepted Answer

Common equivalents include: 2SC4789, 2SC479, 2SC4793, 2SC4796, 2SC4797, 2SC479H, 2SC48, 2SC480

2SC4806 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1700 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft)	1 MHz
Collector Capacitance (Cc)	240 pF
Forward Current Transfer Ratio (hFE), MIN	8
Noise Figure, dB	-
Package	ISOWATT218
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-	V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su
Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit	mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi
Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit	mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.