2SC4806 bipolar transistor — Specifications & Equivalents
Manufacturer: Multi-source (JIS registered part number)
About the 2SC4806
The 2SC4806 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 600 V, a continuous collector current (IC) of 5 A and a DC current gain (hFE) of minimum 8. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the ISOWATT218 package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 600 V
- Max collector current (IC): 5 A
- DC current gain (hFE): minimum 8
- Transition frequency (fT): 1 MHz
- Power dissipation (PD): 50 W
- Max junction temperature (TJ): 150 °C
- Package: ISOWATT218
- Manufacturer: Multi-source (JIS registered part number)
Typical applications
Judging from its ratings the 2SC4806 is generally applied in power output and driver stages and high-voltage switching such as offline converters and lamp drivers.
A transition frequency (fT) of 1 MHz indicates the frequency range over which useful current gain remains available.
The quoted current gain of minimum 8 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 600 V, VCBO 1700 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 50 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the 2SC4806
A drop-in substitute for the 2SC4806 must be the same NPN type and offer a collector–emitter rating of at least 600 V, a collector current rating of at least 5 A, current gain in the same ballpark as minimum 8 and a transition frequency of at least 1 MHz for the same bandwidth.
Mechanically, check the replacement against the ISOWATT218 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2SC4806 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2SC4806?
The 2SC4806 is an NPN bipolar junction transistor (BJT). It is rated for 600 V collector-emitter and 5 A continuous collector current.
What is the maximum voltage of the 2SC4806?
Maximum collector-emitter voltage (Vceo) is 600 V, and collector-base (Vcbo) is 1700 V.
How much current can the 2SC4806 handle?
Continuous collector current is rated at 5 A, with dissipation limited to 50 W.
What is the hFE of the 2SC4806?
DC current gain (hFE) is quoted as minimum 8. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the 2SC4806 come in?
It is listed in ISOWATT218. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2SC4806?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1700 V |
| Maximum Collector-Emitter Voltage |Vce| | 600 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 1 MHz |
| Collector Capacitance (Cc) | 240 pF |
| Forward Current Transfer Ratio (hFE), MIN | 8 |
| Noise Figure, dB | - |
| Package | ISOWATT218 |
| INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage- | V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su |
| Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit | mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi |
| Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit | mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0. |