Question 1

What is 2SC4781?

Accepted Answer

2SC4781 Transistor Datasheet pdf, 2SC4781 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SC4781?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 0.9 W, Maximum Collector-Base Voltage |Vcb|: 30 V, Maximum Collector-Emitter Voltage |Vce|: 30 V, Maximum Emitter-Base Voltage |Veb|: 10 V, Maximum Collector Current |Ic max|: 4 A, Max. Operating Junction Temperature (Tj): 150 °C, Transition Frequency (ft): 170 MHz, Noise Figure, dB: -, Package: TO92, DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1, Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)

Question 3

What are equivalent components to 2SC4781?

Accepted Answer

Common equivalents include: 2SC4761, 2SC4762, 2SC4763, 2SC4764, 2SC4765, 2SC4766, 2SC477, 2SC478

2SC4781 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	0.9 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft)	170 MHz
Noise Figure, dB	-
Package	TO92
DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit	mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1
Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit	mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)