2SC4766 Transistor — Specifications & Equivalents
2SC4766 Transistor Datasheet pdf, 2SC4766 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1700 V |
| Maximum Collector-Emitter Voltage |Vce| | 600 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 1 MHz |
| Collector Capacitance (Cc) | 70 pF |
| Forward Current Transfer Ratio (hFE), MIN | 200 |
| Noise Figure, dB | - |
| Package | ISOWATT218 |
| INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4766DESCRIPTIONHigh Breakdown Voltage- | V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS |
| Transistor2SC4767Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit | mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f=175MHz).0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.11.27 1.27Collector |