Question 1

What is 2SC4789?

Accepted Answer

2SC4789 Transistor Datasheet pdf, 2SC4789 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SC4789?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 150 W, Maximum Collector-Base Voltage |Vcb|: 1500 V, Maximum Collector-Emitter Voltage |Vce|: 800 V, Maximum Emitter-Base Voltage |Veb|: 6 V, Maximum Collector Current |Ic max|: 25 A, Max. Operating Junction Temperature (Tj): 150 °C, Forward Current Transfer Ratio (hFE), MIN: 10, Noise Figure, dB: -, Package: TO3PL, DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1

Question 3

What are equivalent components to 2SC4789?

Accepted Answer

Common equivalents include: 2SC4762, 2SC4763, 2SC4764, 2SC4765, 2SC4766, 2SC477, 2SC478, 2SC4781

2SC4789 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	10
Noise Figure, dB	-
Package	TO3PL
DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit	mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1