2SC479H Transistor — Specifications & Equivalents
2SC479H Transistor Datasheet pdf, 2SC479H Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.65 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.6 A |
| Max. Operating Junction Temperature (Tj) | 200 °C |
| Collector Capacitance (Cc) | 20 pF |
| Forward Current Transfer Ratio (hFE), MIN | 40 |
| Noise Figure, dB | - |
| Package | TO5 |
| 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit | mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO |
| UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number | 2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T |