2SC48 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JIS registered part number)

About the 2SC48

The 2SC48 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 80 V, a continuous collector current (IC) of 0.72 A and a DC current gain (hFE) of minimum 50. It can dissipate up to 0.6 W and is rated to a junction temperature of 175 °C. It is supplied in the TO5 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 80 V
  • Max collector current (IC): 0.72 A
  • DC current gain (hFE): minimum 50
  • Transition frequency (fT): 90 MHz
  • Power dissipation (PD): 0.6 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO5
  • Manufacturer: Multi-source (JIS registered part number)

Typical applications

A transition frequency (fT) of 90 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 50 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 80 V, VCBO 120 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 0.6 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2SC48

A drop-in substitute for the 2SC48 must be the same NPN type and offer a collector–emitter rating of at least 80 V, a collector current rating of at least 0.72 A, current gain in the same ballpark as minimum 50 and a transition frequency of at least 90 MHz for the same bandwidth.

Mechanically, check the replacement against the TO5 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SC48 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SC48?

The 2SC48 is an NPN bipolar junction transistor (BJT). It is rated for 80 V collector-emitter and 0.72 A continuous collector current.

What is the maximum voltage of the 2SC48?

Maximum collector-emitter voltage (Vceo) is 80 V, and collector-base (Vcbo) is 120 V.

How much current can the 2SC48 handle?

Continuous collector current is rated at 0.72 A, with dissipation limited to 0.6 W.

What is the hFE of the 2SC48?

DC current gain (hFE) is quoted as minimum 50. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2SC48 come in?

It is listed in TO5. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SC48?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.6 W
Maximum Collector-Base Voltage |Vcb|120 V
Maximum Collector-Emitter Voltage |Vce|80 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.72 A
Max. Operating Junction Temperature (Tj)175 °C
Transition Frequency (ft)90 MHz
Collector Capacitance (Cc)25 pF
Forward Current Transfer Ratio (hFE), MIN50
Noise Figure, dB-
PackageTO5
2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unitmm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unitmm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC
2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unitmm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

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