2SC480 bipolar transistor — Specifications & Equivalents
Manufacturer: Multi-source (JIS registered part number)
About the 2SC480
The 2SC480 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 40 V, a continuous collector current (IC) of 0.6 A and a DC current gain (hFE) of minimum 40. It can dissipate up to 0.65 W and is rated to a junction temperature of 175 °C. It is supplied in the TO5 package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 40 V
- Max collector current (IC): 0.6 A
- DC current gain (hFE): minimum 40
- Power dissipation (PD): 0.65 W
- Max junction temperature (TJ): 175 °C
- Package: TO5
- Manufacturer: Multi-source (JIS registered part number)
Typical applications
The quoted current gain of minimum 40 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 40 V, VCBO 60 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 0.65 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the 2SC480
A drop-in substitute for the 2SC480 must be the same NPN type and offer a collector–emitter rating of at least 40 V, a collector current rating of at least 0.6 A and current gain in the same ballpark as minimum 40.
Mechanically, check the replacement against the TO5 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2SC480 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2SC480?
The 2SC480 is an NPN bipolar junction transistor (BJT). It is rated for 40 V collector-emitter and 0.6 A continuous collector current.
What is the maximum voltage of the 2SC480?
Maximum collector-emitter voltage (Vceo) is 40 V, and collector-base (Vcbo) is 60 V.
How much current can the 2SC480 handle?
Continuous collector current is rated at 0.6 A, with dissipation limited to 0.65 W.
What is the hFE of the 2SC480?
DC current gain (hFE) is quoted as minimum 40. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the 2SC480 come in?
It is listed in TO5. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2SC480?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.65 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.6 A |
| Max. Operating Junction Temperature (Tj) | 175 °C |
| Forward Current Transfer Ratio (hFE), MIN | 40 |
| Noise Figure, dB | - |
| Package | TO5 |
| Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit | mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi |
| Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit | mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0. |
| Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit | mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat |