2SC480 Transistor — Specifications & Equivalents
2SC480 Transistor Datasheet pdf, 2SC480 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.65 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.6 A |
| Max. Operating Junction Temperature (Tj) | 175 °C |
| Forward Current Transfer Ratio (hFE), MIN | 40 |
| Noise Figure, dB | - |
| Package | TO5 |
| Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit | mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi |
| Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit | mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0. |
| Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit | mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat |