Question 1

What is 2SC1815?

Accepted Answer

2SC1815 Transistor Datasheet pdf, 2SC1815 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SC1815?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 0.4 W, Maximum Collector-Base Voltage |Vcb|: 60 V, Maximum Collector-Emitter Voltage |Vce|: 50 V, Maximum Emitter-Base Voltage |Veb|: 5 V, Maximum Collector Current |Ic max|: 0.15 A, Max. Operating Junction Temperature (Tj): 175 °C, Transition Frequency (ft): 80 MHz, Collector Capacitance (Cc): 3.5 pF, Forward Current Transfer Ratio (hFE), MIN: 70, Noise Figure, dB: -, Package: TO92, 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.), UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen, 2SC1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING: 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW

Question 3

What are equivalent components to 2SC1815?

Accepted Answer

Common equivalents include: 2SC180H, 2SC181, 2SC1810, 2SC1811, 2SC1811-1, 2SC1811-2, 2SC1812, 2SC1813

2SC1815 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.15 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft)	80 MHz
Collector Capacitance (Cc)	3.5 pF
Forward Current Transfer Ratio (hFE), MIN	70
Noise Figure, dB	-
Package	TO92
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit	mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage	BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen
2SC1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING	2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW