SQD50N02-04L Transistor — Specifications & Equivalents
SQD50N02-04L Transistor Datasheet, SQD50N02-04L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 136 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 50 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 1437 pF |
| Package | TO-252 |
| SQD50N02-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 20 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0043 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.006 100 % Rg and UIS TestedID (A) 50 Material categorization | Configuration Single |
| SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization | ID (A) 50For definitions of compliance please seeConfiguration Single |
| SQD50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0060 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0085 Material categorization | ID (A) 50For definitions of compliance please see Configuration Singl |