SQD50N03-06P MOSFET — Specifications & Equivalents

About the SQD50N03-06P

The SQD50N03-06P is a MOSFET with a drain–source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 50 A. It can dissipate up to 83 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-252 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 30 V
  • Max continuous drain current (ID): 50 A
  • Power dissipation (PD): 83 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO-252

Typical applications

With its 30 V drain–source rating the SQD50N03-06P sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 563 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the SQD50N03-06P

A drop-in substitute for the SQD50N03-06P should match its polarity and offer a drain–source rating of at least 30 V and a continuous drain current rating of at least 50 A.

Mechanically, check the replacement against the TO-252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the SQD50N03-06P?

The SQD50N03-06P is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 50 A continuous drain current.

What is the maximum voltage of the SQD50N03-06P?

The SQD50N03-06P has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the SQD50N03-06P handle?

It is rated for 50 A of continuous drain current, with power dissipation limited to 83 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the SQD50N03-06P come in?

It is listed in TO-252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the SQD50N03-06P?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation83 W
|Vds|ⓘ - Maximum Drain-Source Voltage30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current50 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance563 pF
PackageTO-252
SQD50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0060 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0085 Material categorizationID (A) 50For definitions of compliance please see Configuration Singl
SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorizationID (A) 50For definitions of compliance please seeConfiguration Single

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