SQD45P03-12 Transistor — Specifications & Equivalents

SQD45P03-12 Transistor Datasheet, SQD45P03-12 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation71 W
|Vds|ⓘ - Maximum Drain-Source Voltage30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current50 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance616 pF
PackageTO-252
SQD45P03-12www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.024 100 % Rg and UIS TestedID (A) - 50 Material categorizationConfiguration Sing

Equivalent & Replacement Parts

Browse all electronic components