SQD45P03-12 Transistor — Specifications & Equivalents
SQD45P03-12 Transistor Datasheet, SQD45P03-12 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 71 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 30 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 50 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 616 pF |
| Package | TO-252 |
| SQD45P03-12www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.024 100 % Rg and UIS TestedID (A) - 50 Material categorization | Configuration Sing |