Question 1

What is SQD40N04-10A?

Accepted Answer

SQD40N04-10A Transistor Datasheet, SQD40N04-10A Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of SQD40N04-10A?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 71 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 42 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 385 pF, Package: TO-252, SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization: Configuration Single

Question 3

What are equivalent components to SQD40N04-10A?

Accepted Answer

Common equivalents include: SQD10N30-330H, SQD15N06-42L, SQD19P06-60L, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L

SQD40N04-10A Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	71 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	40 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	42 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	385 pF
Package	TO-252
SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization	Configuration Single