SQD35N05-26L Transistor — Specifications & Equivalents
SQD35N05-26L Transistor Datasheet, SQD35N05-26L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 50 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 55 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 30 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 203 pF |
| Package | TO-252 |
Equivalent & Replacement Parts
- SQD100N04-3M6L
- SQD10N30-330H
- SQD15N06-42L
- SQD19P06-60L
- SQD23N06-31L
- SQD25N06-22L
- SQD25N15-52
- SQD30N05-20L
- SKD502T
- SQD40N04-10A
- SQD40N06-14L
- SQD40N10-25
- SQD40P10-40L
- SQD45P03-12
- SQD50N02-04L
- SQD50N03-06P
- SQD50N03-09