SQD25N15-52 Transistor — Specifications & Equivalents
SQD25N15-52 Transistor Datasheet, SQD25N15-52 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 107 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 150 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 25 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 215 pF |
| Package | TO-252 |
| SQD25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifiedConfiguration Single Material categorization | DTO-252For definitions of compli |
Equivalent & Replacement Parts
- SQD100N03-3M4
- SQD100N04-3M6
- SQD100N04-3M6L
- SQD10N30-330H
- SQD15N06-42L
- SQD19P06-60L
- SQD23N06-31L
- SQD25N06-22L
- STP80NF70
- SQD30N05-20L
- SQD35N05-26L
- SQD40N04-10A
- SQD40N06-14L
- SQD40N10-25
- SQD40P10-40L
- SQD45P03-12
- SQD50N02-04L