Question 1

What is SQD50N04-5M0?

Accepted Answer

SQD50N04-5M0 Transistor Datasheet, SQD50N04-5M0 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of SQD50N04-5M0?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 136 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 50 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 500 pF, Package: TO-252, SQD50N04-5m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0056 AEC-Q101 QualifiedID (A) 50 100 % Rg and UIS Tested Material categorization: Configuration SingleFor definitions of compliance please se, SQD50N04-4m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0042 100 % Rg and UIS TestedID (A) 50 Material categorization: Configuration Single

Question 3

What are equivalent components to SQD50N04-5M0?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

SQD50N04-5M0 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	136 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	40 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	50 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	500 pF
Package	TO-252
SQD50N04-5m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0056 AEC-Q101 QualifiedID (A) 50 100 % Rg and UIS Tested Material categorization	Configuration SingleFor definitions of compliance please se
SQD50N04-4m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0042 100 % Rg and UIS TestedID (A) 50 Material categorization	Configuration Single