SQD30N05-20L Transistor — Specifications & Equivalents
SQD30N05-20L Transistor Datasheet, SQD30N05-20L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 50 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 55 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 30 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 203 pF |
| Package | TO-252 |
| SQD30N05-20Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 55 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.026 Material categorization | ID (A) 30For definitions of compliance please see Configuration Single |
Equivalent & Replacement Parts
- SQD100N04-3M6
- SQD100N04-3M6L
- SQD10N30-330H
- SQD15N06-42L
- SQD19P06-60L
- SQD23N06-31L
- SQD25N06-22L
- SQD25N15-52
- 13N50
- SQD35N05-26L
- SQD40N04-10A
- SQD40N06-14L
- SQD40N10-25
- SQD40P10-40L
- SQD45P03-12
- SQD50N02-04L
- SQD50N03-06P