SQD40P10-40L MOSFET — Specifications & Equivalents
About the SQD40P10-40L
The SQD40P10-40L is a MOSFET with a drain–source voltage (VDS) rating of 100 V and a continuous drain current (ID) of 38 A. It can dissipate up to 136 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-252 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 100 V
- Max continuous drain current (ID): 38 A
- Power dissipation (PD): 136 W
- Max junction temperature (TJ): 175 °C
- Package: TO-252
Typical applications
With its 100 V drain–source rating the SQD40P10-40L sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 301 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the SQD40P10-40L
A drop-in substitute for the SQD40P10-40L should match its polarity and offer a drain–source rating of at least 100 V and a continuous drain current rating of at least 38 A.
Mechanically, check the replacement against the TO-252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the SQD40P10-40L?
The SQD40P10-40L is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 38 A continuous drain current.
What is the maximum voltage of the SQD40P10-40L?
The SQD40P10-40L has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the SQD40P10-40L handle?
It is rated for 38 A of continuous drain current, with power dissipation limited to 136 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the SQD40P10-40L come in?
It is listed in TO-252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the SQD40P10-40L?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 136 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 100 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 38 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 301 pF |
| Package | TO-252 |
| SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization | Configuration Single |
| SQD40081ELwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESTO-252TO TrenchFET power MOSFET Package with low thermal resistanceDrain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization | for definitions of compliance please see ViewPRODUCT S |
| SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization | Configuration Single |