TIP122 Transistor — Specifications & Equivalents
TIP122 Transistor Datasheet pdf, TIP122 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 1000 |
| Noise Figure, dB | - |
| Package | TO220 |
| TIP120/121/122Medium Power Linear Switching Applications Complementary to TIP125/126/127TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value UnitsVCBO Collector-Base Voltage | TIP120 60 V : TIP121 80 VB : TIP122 100 VVCEO Collector-Emitter Voltage : |
Equivalent & Replacement Parts
- TIP110
- TIP111
- TIP112
- TIP115
- TIP116
- TIP117
- TIP120
- TIP121
- 2SC5200
- TIP125
- TIP126
- TIP127
- TIP130
- TIP131
- TIP132
- TIP135
- TIP136