A1941 Transistor — Specifications & Equivalents
A1941 Transistor Datasheet pdf, A1941 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 100 W |
| Maximum Collector-Base Voltage |Vcb| | 160 V |
| Maximum Collector-Emitter Voltage |Vce| | 160 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 10 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 30 MHz |
| Collector Capacitance (Cc) | 480 pF |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO-3PN |
| 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit | mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle |
Equivalent & Replacement Parts
- P2N2907A
- PN100
- PN200
- 2CF2325
- SL100
- 2N23867
- 2N3055HV
- 2N6371HV
- NJW0281G
- BD237S
- BD675BPL
- BF422BPL
- BU908F
- BUF508A
- BUX84A
- C5198
- CD13002