TK12A60U MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by Toshiba

About the TK12A60U

The TK12A60U is a MOSFET with a drain–source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 12 A. It can dissipate up to 35 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220SIS package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 600 V
  • Max continuous drain current (ID): 12 A
  • Power dissipation (PD): 35 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220SIS
  • Manufacturer: Commonly produced by Toshiba

Typical applications

With its 600 V drain–source rating the TK12A60U sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 1700 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the TK12A60U

A drop-in substitute for the TK12A60U should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 12 A.

Mechanically, check the replacement against the TO220SIS footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the TK12A60U?

The TK12A60U is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 12 A continuous drain current.

What is the maximum voltage of the TK12A60U?

The TK12A60U has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the TK12A60U handle?

It is rated for 12 A of continuous drain current, with power dissipation limited to 35 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the TK12A60U come in?

It is listed in TO220SIS. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the TK12A60U?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation35 W
|Vds|ⓘ - Maximum Drain-Source Voltage600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current12 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance1700 pF
PackageTO220SIS
TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceRDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

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