TK12A60D Transistor — Specifications & Equivalents

TK12A60D Transistor Datasheet, TK12A60D Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation45 W
|Vds|ⓘ - Maximum Drain-Source Voltage600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current12 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance190 pF
PackageTO220SIS
TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceRDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

Equivalent & Replacement Parts

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