TK12A65D Transistor — Specifications & Equivalents
TK12A65D Transistor Datasheet, TK12A65D Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 50 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 12 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 200 pF |
| Package | TO220SIS |
| TK12A65DMOSFETs Silicon N-Channel MOS (-MOS)TK12A65DTK12A65DTK12A65DTK12A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 0.46 (typ.)(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)(3) Low leakage current: ID |
| TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E |