TK11A60D MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by Toshiba
About the TK11A60D
The TK11A60D is an N-channel MOSFET with a drain–source voltage (VDS) rating of 600 V, a continuous drain current (ID) of 11 A and an on-resistance (RDS(on)) of 0.65 Ω. It can dissipate up to 45 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220SIS package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 11 A
- On-resistance (RDS(on)): 0.65 Ω
- Power dissipation (PD): 45 W
- Max junction temperature (TJ): 150 °C
- Package: TO220SIS
- Manufacturer: Commonly produced by Toshiba
Typical applications
With its 600 V drain–source rating the TK11A60D sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 25 ns and an output capacitance (Coss) of 165 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the TK11A60D
A drop-in substitute for the TK11A60D must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 11 A and an on-resistance no higher than 0.65 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220SIS footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the TK11A60D?
The TK11A60D is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 11 A continuous drain current.
What is the maximum voltage of the TK11A60D?
The TK11A60D has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the TK11A60D handle?
It is rated for 11 A of continuous drain current, with power dissipation limited to 45 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the TK11A60D?
On-resistance (Rds(on)) is 0.65 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the TK11A60D come in?
It is listed in TO220SIS. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the TK11A60D?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 11 A |
| Drain-Source On-Resistance (Rds) | 0.65 |
| Rise Time (tr) | 25 nS |
| Output Capacitance (Coss) | 165 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220SIS |
| Power Dissipation (Pd) | 45 W |
Equivalent & Replacement Parts
No verified equivalents are listed for TK11A60D yet.