TK12E60U MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by Toshiba
About the TK12E60U
The TK12E60U is a MOSFET with a drain–source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 12 A. It can dissipate up to 144 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 12 A
- Power dissipation (PD): 144 W
- Max junction temperature (TJ): 150 °C
- Package: TO220
- Manufacturer: Commonly produced by Toshiba
Typical applications
With its 600 V drain–source rating the TK12E60U sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 1700 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the TK12E60U
A drop-in substitute for the TK12E60U should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 12 A.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the TK12E60U?
The TK12E60U is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 12 A continuous drain current.
What is the maximum voltage of the TK12E60U?
The TK12E60U has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the TK12E60U handle?
It is rated for 12 A of continuous drain current, with power dissipation limited to 144 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the TK12E60U come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the TK12E60U?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 144 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 12 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 1700 pF |
| Package | TO220 |
| TK12E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60UTK12E60UTK12E60UTK12E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 0.36 (typ.)(2) High forward transfer admittance: |Yfs| = 7.0 S (typ.)(3) Low leakage current: IDS |
| TK12E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60WTK12E60WTK12E60WTK12E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E |