AO4468 MOSFET — Specifications & Equivalents

About the AO4468

The AO4468 is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 30 V, a continuous drain current (I_D) of 10.5 A and an on-resistance (R_DS(on)) of 0.017 Ω. It can dissipate up to 3.1 W and is rated to a junction temperature of 150 °C. It is supplied in the SO-8 package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 30 V
• Max continuous drain current (I_D): 10.5 A
• On-resistance (R_DS(on)): 0.017 Ω
• Gate threshold (V_GS(th)): 2.4 V
• Power dissipation (P_D): 3.1 W
• Max junction temperature (T_J): 150 °C
• Package: SO-8
• Manufacturer: Commonly produced by Alpha & Omega Semiconductor

Typical applications

With its 30 V drain–source rating the AO4468 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The low 0.017 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

A gate threshold (V_GS(th)) of 2.4 V means the AO4468 can usually be driven from 3.3 V or 5 V logic, though full enhancement still needs the gate taken clearly above the threshold.

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 7.5 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 3.5 ns and an output capacitance (C_oss) of 110 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the AO4468

A drop-in substitute for the AO4468 must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 10.5 A, an on-resistance no higher than 0.017 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the SO-8 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the AO4468?

The AO4468 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 10.5 A continuous drain current.

What is the maximum voltage of the AO4468?

The AO4468 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the AO4468 handle?

It is rated for 10.5 A of continuous drain current, with power dissipation limited to 3.1 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the AO4468?

On-resistance (Rds(on)) is 0.017 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the AO4468 logic-level compatible?

Its gate threshold is 2.4 V, so it can generally be switched from 3.3 V or 5 V logic. Drive the gate well above the threshold for full enhancement.

What package does the AO4468 come in?

It is listed in SO-8. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the AO4468?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.