TK12A50D Transistor — Specifications & Equivalents
TK12A50D Transistor Datasheet, TK12A50D Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 45 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 12 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 135 pF |
| Package | TO220SIS |
| TK12A50D5MOSFETs Silicon N-Channel MOS (-MOS)TK12A50D5TK12A50D5TK12A50D5TK12A50D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time | trrf = 50 ns (typ.), trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.)(3) High |
| TK12A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A50WTK12A50WTK12A50WTK12A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E |