TIP42E Transistor — Specifications & Equivalents
TIP42E Transistor Datasheet pdf, TIP42E Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 180 V |
| Maximum Collector-Emitter Voltage |Vce| | 140 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42E DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- | VCEO(SUS) = -140V(Min) Complement to Type TIP41E APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE |