TIP47 bipolar transistor — Specifications & Equivalents
Manufacturer: Multi-source (originally a Texas Instruments TIP series)
About the TIP47
The TIP47 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 250 V, a continuous collector current (IC) of 1 A and a DC current gain (hFE) of minimum 30. It can dissipate up to 40 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 250 V
- Max collector current (IC): 1 A
- DC current gain (hFE): minimum 30
- Transition frequency (fT): 10 MHz
- Power dissipation (PD): 40 W
- Max junction temperature (TJ): 150 °C
- Package: TO220
- Manufacturer: Multi-source (originally a Texas Instruments TIP series)
Typical applications
Judging from its ratings the TIP47 is generally applied in power output and driver stages.
A transition frequency (fT) of 10 MHz indicates the frequency range over which useful current gain remains available.
The quoted current gain of minimum 30 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 250 V, VCBO 350 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 40 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the TIP47
A drop-in substitute for the TIP47 must be the same NPN type and offer a collector–emitter rating of at least 250 V, a collector current rating of at least 1 A, current gain in the same ballpark as minimum 30 and a transition frequency of at least 10 MHz for the same bandwidth.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
This is a widely second-sourced series, so verify parameters against the datasheet of the brand you are buying rather than assuming every version is identical.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the TIP47?
The TIP47 is an NPN bipolar junction transistor (BJT). It is rated for 250 V collector-emitter and 1 A continuous collector current.
What is the maximum voltage of the TIP47?
Maximum collector-emitter voltage (Vceo) is 250 V, and collector-base (Vcbo) is 350 V.
How much current can the TIP47 handle?
Continuous collector current is rated at 1 A, with dissipation limited to 40 W.
What is the hFE of the TIP47?
DC current gain (hFE) is quoted as minimum 30. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the TIP47 come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the TIP47?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 40 W |
| Maximum Collector-Base Voltage |Vcb| | 350 V |
| Maximum Collector-Emitter Voltage |Vce| | 250 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 10 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 30 |
| Noise Figure, dB | - |
| Package | TO220 |
| November 2008TIP47/TIP48/TIP49/TIP50NPN Silicon Transistor High Voltage and Switching Applications High Sustaining Voltage | VCEO(sus) = 250 - 400V 1A Rated Collector CurrentTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage : TIP47 350 V : TIP48 400 V : TIP4 |
| TIP47/48/49/50 NPN SILICON TRANSISTORHIGH VOLTAGE AND SWITCHINGTO-220APPLICATIONSHIGH SUSTAINING VOLTAGE(V (sus) | 250 to 400V)CEO1A RATED COLLECTOR CURRENTABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP47 VCBO 350 V :TIP48 400 V :TIP49 450 V :TIP50 500 V Collector Emitter Voltage : TIP47 VCEO 250 V 1.Base 2.Collector 3.Emitter |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865