TIP41D Transistor — Specifications & Equivalents
TIP41D Transistor Datasheet pdf, TIP41D Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 160 V |
| Maximum Collector-Emitter Voltage |Vce| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| isc Silicon NPN Power Transistors TIP41DDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage- | V = 120V(Min)CEO(SUS)Complement to Type TIP42DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RAT |