TIP501 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (originally a Texas Instruments TIP series)

About the TIP501

The TIP501 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 40 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of minimum 25. It can dissipate up to 6 W and is rated to a junction temperature of 200 °C. It is supplied in the TO39 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 40 V
  • Max collector current (IC): 3 A
  • DC current gain (hFE): minimum 25
  • Power dissipation (PD): 6 W
  • Max junction temperature (TJ): 200 °C
  • Package: TO39
  • Manufacturer: Multi-source (originally a Texas Instruments TIP series)

Typical applications

The quoted current gain of minimum 25 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 40 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 6 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the TIP501

A drop-in substitute for the TIP501 must be the same NPN type and offer a collector–emitter rating of at least 40 V, a collector current rating of at least 3 A and current gain in the same ballpark as minimum 25.

Mechanically, check the replacement against the TO39 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

This is a widely second-sourced series, so verify parameters against the datasheet of the brand you are buying rather than assuming every version is identical.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the TIP501?

The TIP501 is an NPN bipolar junction transistor (BJT). It is rated for 40 V collector-emitter and 3 A continuous collector current.

What is the maximum voltage of the TIP501?

Maximum collector-emitter voltage (Vceo) is 40 V.

How much current can the TIP501 handle?

Continuous collector current is rated at 3 A, with dissipation limited to 6 W.

What is the hFE of the TIP501?

DC current gain (hFE) is quoted as minimum 25. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the TIP501 come in?

It is listed in TO39. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the TIP501?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)6 W
Maximum Collector-Emitter Voltage |Vce|40 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|3 A
Max. Operating Junction Temperature (Tj)200 °C
Forward Current Transfer Ratio (hFE), MIN25
Noise Figure, dB-
PackageTO39
November 2008TIP47/TIP48/TIP49/TIP50NPN Silicon Transistor High Voltage and Switching Applications High Sustaining VoltageVCEO(sus) = 250 - 400V 1A Rated Collector CurrentTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage : TIP47 350 V : TIP48 400 V : TIP4

Equivalent & Replacement Parts

  • 2SB858B
  • 2SB858C
  • 2SB858D
  • 2SB859
  • 2SB859B
  • 2SB859C
  • 2SB86
  • 2SB860
  • 2SC2625
  • 2SB861B
  • 2SB861C
  • 2SB862
  • 2SB863
  • 2SB863O
  • 2SB863R
  • 2SB864
  • 2SB865

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