TIP501 Transistor — Specifications & Equivalents
TIP501 Transistor Datasheet pdf, TIP501 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 6 W |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 200 °C |
| Forward Current Transfer Ratio (hFE), MIN | 25 |
| Noise Figure, dB | - |
| Package | TO39 |
| November 2008TIP47/TIP48/TIP49/TIP50NPN Silicon Transistor High Voltage and Switching Applications High Sustaining Voltage | VCEO(sus) = 250 - 400V 1A Rated Collector CurrentTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage : TIP47 350 V : TIP48 400 V : TIP4 |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865