TIP42F Transistor — Specifications & Equivalents
TIP42F Transistor Datasheet pdf, TIP42F Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 200 V |
| Maximum Collector-Emitter Voltage |Vce| | 160 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42F DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- | VCEO(SUS) = -160V(Min) Complement to Type TIP41F APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865