TIP42 Transistor — Specifications & Equivalents
TIP42 Transistor Datasheet pdf, TIP42 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 80 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| December 2009TIP42/TIP42A/TIP42B/TIP42CPNP Epitaxial Silicon TransistorFeatures Medium Power Linear Switching Applications Complement to TIP41/TIP41A/TIP41B/TIP41CTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage | TIP42 - 40 V : TIP42A - 60 V : TIP42B - 80 V : TIP |
| TIP42 SERIES(TIP42/42A/42B/42C) PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP41/41A/41B/41CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage | TIP42 VCBO -40 V: TIP42A -60 V: TIP42B -80 V: TIP42C -100 V Collector Emitter Voltage : TIP42 VCEO -40 V: TIP42A -60 V: TIP42B -80 V1.B |
| TIP41, TIP41A, TIP41B,TIP41C (NPN); TIP42, TIP42A,TIP42B, TIP42C (PNP)Complementary SiliconPlastic Power Transistorshttp | //onsemi.comDesigned for use in general purpose amplifier and switchingapplications.6 AMPEREFeaturesCOMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 VPOWER TRANSISTORSHuman Body Model, 3B; > 8000 V40-60-80-100 VOLTS, Epoxy Meets U |