2N5551 Transistor — Specifications & Equivalents

NPN Bipolar Transistor 2N5551

Key Specifications

TypeNPN
Collector-Emitter Voltage, max160V
Collector-Base Voltage, max180V
Emitter-Base Voltage, max6V
Collector Current − Continuous, max0.6A
Collector Dissipation0.625W
DC Current Gain (hfe)80to250
Transition Frequency, min100MHz
Noise Figure, max8dB
Operating and Storage Junction Temperature Range-55 to +150°C
PackageTO-92

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5551 yet.

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