2SC5200 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JIS registered part number)

About the 2SC5200

The 2SC5200 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 250 V, a continuous collector current (IC) of 17 A and a DC current gain (hFE) of minimum 55. It can dissipate up to 150 W. It is supplied in the TO264 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 250 V
  • Max collector current (IC): 17 A
  • DC current gain (hFE): minimum 55
  • Power dissipation (PD): 150 W
  • Package: TO264
  • Manufacturer: Multi-source (JIS registered part number)

Typical applications

Judging from its ratings the 2SC5200 is generally applied in power output and driver stages.

The quoted current gain of minimum 55 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 250 V, VCBO 250 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 150 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2SC5200

A drop-in substitute for the 2SC5200 must be the same NPN type and offer a collector–emitter rating of at least 250 V, a collector current rating of at least 17 A and current gain in the same ballpark as minimum 55.

Mechanically, check the replacement against the TO264 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SC5200 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SC5200?

The 2SC5200 is an NPN bipolar junction transistor (BJT). It is rated for 250 V collector-emitter and 17 A continuous collector current.

What is the maximum voltage of the 2SC5200?

Maximum collector-emitter voltage (Vceo) is 250 V, and collector-base (Vcbo) is 250 V.

How much current can the 2SC5200 handle?

Continuous collector current is rated at 17 A, with dissipation limited to 150 W.

What is the hFE of the 2SC5200?

DC current gain (hFE) is quoted as minimum 55. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2SC5200 come in?

It is listed in TO264. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SC5200?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)150 W
Maximum Collector-Base Voltage |Vcb|250 V
Maximum Collector-Emitter Voltage |Vce|250 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|17 A
Forward Current Transfer Ratio (hFE), MIN55
Noise Figure, dB-
PackageTO264
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unitmm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter
January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current CapabilityIC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel
DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current CapabilityIC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

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