2SC5200 Transistor — Specifications & Equivalents
2SC5200 Transistor Datasheet pdf, 2SC5200 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 150 W |
| Maximum Collector-Base Voltage |Vcb| | 250 V |
| Maximum Collector-Emitter Voltage |Vce| | 250 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 17 A |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO264 |
| 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit | mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter |
| January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability | IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel |
| DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability | IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple |