TIP41B Transistor — Specifications & Equivalents
TIP41B Transistor Datasheet pdf, TIP41B Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 65 W |
| Maximum Collector-Base Voltage |Vcb| | 120 V |
| Maximum Collector-Emitter Voltage |Vce| | 80 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| July 2008TIP41/TIP41A/TIP41B/TIP41CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP42/TIP42A/TIP42B/TIP42C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Emitter Voltage | TIP41 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V VCEO Collector-Emitter Voltage: TIP41 40 V : TI |
| TIP41, TIP41A, TIP41B,TIP41C (NPN); TIP42, TIP42A,TIP42B, TIP42C (PNP)Complementary SiliconPlastic Power Transistorshttp | //onsemi.comDesigned for use in general purpose amplifier and switchingapplications.6 AMPEREFeaturesCOMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 VPOWER TRANSISTORSHuman Body Model, 3B; > 8000 V40-60-80-100 VOLTS, Epoxy Meets U |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865