D882 bipolar transistor — Specifications & Equivalents
About the D882
The D882 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 30 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of minimum 60. It can dissipate up to 0.5 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT89 package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 30 V
- Max collector current (IC): 3 A
- DC current gain (hFE): minimum 60
- Transition frequency (fT): 50 MHz
- Power dissipation (PD): 0.5 W
- Max junction temperature (TJ): 150 °C
- Package: SOT89
Typical applications
A transition frequency (fT) of 50 MHz indicates the frequency range over which useful current gain remains available.
The quoted current gain of minimum 60 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 30 V, VCBO 40 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 0.5 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the D882
A drop-in substitute for the D882 must be the same NPN type and offer a collector–emitter rating of at least 30 V, a collector current rating of at least 3 A, current gain in the same ballpark as minimum 60 and a transition frequency of at least 50 MHz for the same bandwidth.
Mechanically, check the replacement against the SOT89 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the D882?
The D882 is an NPN bipolar junction transistor (BJT). It is rated for 30 V collector-emitter and 3 A continuous collector current.
What is the maximum voltage of the D882?
Maximum collector-emitter voltage (Vceo) is 30 V, and collector-base (Vcbo) is 40 V.
How much current can the D882 handle?
Continuous collector current is rated at 3 A, with dissipation limited to 0.5 W.
What is the hFE of the D882?
DC current gain (hFE) is quoted as minimum 60. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the D882 come in?
It is listed in SOT89. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the D882?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 50 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 60 |
| Noise Figure, dB | - |
| Package | SOT89 |