Question 1

What is 2SK2651-01MR?

Accepted Answer

2SK2651-01MR Transistor Datasheet, 2SK2651-01MR Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2SK2651-01MR?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 50 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 6 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 130 pF, Package: TO220F15, Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit: mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

Question 3

What are equivalent components to 2SK2651-01MR?

Accepted Answer

Common equivalents include: AOY528, 2SJ154, 2SK1101-01MR, 2SK3515-01MR, 2SK436, 2SK850, 2SK3918, 2SK3918-ZK

2SK2651-01MR Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	50 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	900 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	6 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	130 pF
Package	TO220F15
Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit	mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo